Ferromagnetic Proximity Effect in Ferromagnetic-Semiconductor Hybrid Structures
The project focuses on the coupling of spins in a ferromagnet to carrier spins in a non-magnetic semiconductor close to the ferromagnet/semiconductor interface (the proximity effect). We will study the two main mechanisms responsible for the proximity effect: spin dependent tunneling through the interface and s-d (p-d) exchange interaction between electrons (holes) and magnetic ions. The strength of each of the mechanisms will be optimized by a proper choice of ferromagnetic material. Finally, we will concentrate on optical and electrical control of the ferromagnet‘s magnetization in hybrid structures with strong exchange interaction.